Infineon CoolMOS C3 N-Channel MOSFET, 6.9 A, 900 V, 3-Pin TO-220 IPP90R800C3XKSA1

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Subtotaal (1 tube van 500 eenheden)*

€ 577,50

(excl. BTW)

€ 699,00

(incl. BTW)

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Aantal stuks
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500 +€ 1,155€ 577,50

*prijsindicatie

RS-stocknr.:
857-7040
Fabrikantnummer:
IPP90R800C3XKSA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

N

Maximum Continuous Drain Current

6.9 A

Maximum Drain Source Voltage

900 V

Series

CoolMOS C3

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

10.36mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

42 nC @ 10 V

Transistor Material

Si

Width

4.57mm

Height

15.95mm

Minimum Operating Temperature

-55 °C

Infineon CoolMOS™C3 Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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