Infineon HEXFET Type N-Channel MOSFET, 17 A, 55 V Enhancement, 3-Pin TO-252 IRLR024NTRLPBF

Bekijk alle MOSFETs
Momenteel niet beschikbaar
We weten niet of dit artikel weer voorradig zal zijn, het wordt door de fabrikant stopgezet.
Verpakkingsopties
RS-stocknr.:
830-3332
Artikelnummer Distrelec:
304-44-475
Fabrikantnummer:
IRLR024NTRLPBF
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

45W

Typical Gate Charge Qg @ Vgs

15nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

6.73mm

Standards/Approvals

No

Height

2.39mm

Automotive Standard

No

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Gerelateerde Links