DiodesZetex Isolated 2 Type P-Channel Power MOSFET, 5.8 A, 40 V Enhancement, 8-Pin SOIC DMP4025LSD-13
- RS-stocknr.:
- 823-4030
- Fabrikantnummer:
- DMP4025LSD-13
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 7,58
(excl. BTW)
€ 9,17
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 5.580 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 20 | € 0,758 | € 7,58 |
| 30 - 120 | € 0,551 | € 5,51 |
| 130 - 620 | € 0,458 | € 4,58 |
| 630 - 1240 | € 0,439 | € 4,39 |
| 1250 + | € 0,431 | € 4,31 |
*prijsindicatie
- RS-stocknr.:
- 823-4030
- Fabrikantnummer:
- DMP4025LSD-13
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 5.8A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Forward Voltage Vf | -0.7V | |
| Maximum Power Dissipation Pd | 2.14W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Height | 1.5mm | |
| Width | 3.95 mm | |
| Standards/Approvals | MIL-STD-202, RoHS, AEC-Q101, UL 94V-0, J-STD-020 | |
| Length | 4.95mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q100, AEC-Q101, AEC-Q200 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type Type P | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 5.8A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Forward Voltage Vf -0.7V | ||
Maximum Power Dissipation Pd 2.14W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Height 1.5mm | ||
Width 3.95 mm | ||
Standards/Approvals MIL-STD-202, RoHS, AEC-Q101, UL 94V-0, J-STD-020 | ||
Length 4.95mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q200 | ||
Dual P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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