DiodesZetex DMN2005K Type N-Channel MOSFET, 600 mA, 20 V Enhancement, 3-Pin SOT-23 DMN2005K-7
- RS-stocknr.:
- 822-2545
- Fabrikantnummer:
- DMN2005K-7
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 50 eenheden)*
€ 12,05
(excl. BTW)
€ 14,60
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 200 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 - 450 | € 0,241 | € 12,05 |
| 500 - 1200 | € 0,134 | € 6,70 |
| 1250 - 4950 | € 0,109 | € 5,45 |
| 5000 + | € 0,106 | € 5,30 |
*prijsindicatie
- RS-stocknr.:
- 822-2545
- Fabrikantnummer:
- DMN2005K-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMN2005K | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Forward Voltage Vf | 0.7V | |
| Maximum Power Dissipation Pd | 350mW | |
| Minimum Operating Temperature | -65°C | |
| Typical Gate Charge Qg @ Vgs | 0.5nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 3mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMN2005K | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Forward Voltage Vf 0.7V | ||
Maximum Power Dissipation Pd 350mW | ||
Minimum Operating Temperature -65°C | ||
Typical Gate Charge Qg @ Vgs 0.5nC | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 3mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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