Vishay SiHF9620S Type P-Channel MOSFET, 2 A, 200 V Enhancement, 3-Pin TO-263 SIHF9620S-GE3
- RS-stocknr.:
- 815-2660
- Fabrikantnummer:
- SIHF9620S-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 9,10
(excl. BTW)
€ 11,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 27 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,91 | € 9,10 |
| 100 - 240 | € 0,684 | € 6,84 |
| 250 - 490 | € 0,565 | € 5,65 |
| 500 - 990 | € 0,50 | € 5,00 |
| 1000 + | € 0,476 | € 4,76 |
*prijsindicatie
- RS-stocknr.:
- 815-2660
- Fabrikantnummer:
- SIHF9620S-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | SiHF9620S | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -7V | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Power Dissipation Pd | 40W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Width | 9.65 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series SiHF9620S | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -7V | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Power Dissipation Pd 40W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 4.83mm | ||
Length 10.67mm | ||
Width 9.65 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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