Vishay SiR416DP Type N-Channel MOSFET, 27 A, 40 V Enhancement, 8-Pin SO-8 SIR416DP-T1-GE3
- RS-stocknr.:
- 814-1272
- Fabrikantnummer:
- SIR416DP-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 10,90
(excl. BTW)
€ 13,20
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 17 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 1,09 | € 10,90 |
| 100 - 240 | € 1,026 | € 10,26 |
| 250 - 490 | € 0,926 | € 9,26 |
| 500 - 990 | € 0,871 | € 8,71 |
| 1000 + | € 0,817 | € 8,17 |
*prijsindicatie
- RS-stocknr.:
- 814-1272
- Fabrikantnummer:
- SIR416DP-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SiR416DP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Maximum Power Dissipation Pd | 69W | |
| Forward Voltage Vf | 0.7V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.12mm | |
| Standards/Approvals | No | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SiR416DP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Maximum Power Dissipation Pd 69W | ||
Forward Voltage Vf 0.7V | ||
Maximum Operating Temperature 150°C | ||
Height 1.12mm | ||
Standards/Approvals No | ||
Length 6.25mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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