onsemi UniFET N-Channel MOSFET, 69 A, 250 V Enhancement, 3-Pin TO-3PN FDA69N25
- RS-stocknr.:
- 809-0792
- Fabrikantnummer:
- FDA69N25
- Fabrikant:
- onsemi
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|---|---|
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*prijsindicatie
- RS-stocknr.:
- 809-0792
- Fabrikantnummer:
- FDA69N25
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 69A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-3PN | |
| Series | UniFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 480W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Typical Gate Charge Qg @ Vgs | 77nC | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.1mm | |
| Width | 5mm | |
| Standards/Approvals | No | |
| Length | 15.8mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 69A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-3PN | ||
Series UniFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 480W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Typical Gate Charge Qg @ Vgs 77nC | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Height 20.1mm | ||
Width 5mm | ||
Standards/Approvals No | ||
Length 15.8mm | ||
Automotive Standard No | ||
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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