onsemi Isolated PowerTrench, SyncFET 2 Type N-Channel MOSFET, 16 A, 30 V Enhancement, 8-Pin WDFN FDMC7208S
- RS-stocknr.:
- 806-3490
- Fabrikantnummer:
- FDMC7208S
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 7,79
(excl. BTW)
€ 9,425
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Laatste voorraad RS
- Laatste 1.210 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,558 | € 7,79 |
| 50 - 95 | € 1,342 | € 6,71 |
| 100 - 495 | € 1,164 | € 5,82 |
| 500 - 995 | € 1,022 | € 5,11 |
| 1000 + | € 0,932 | € 4,66 |
*prijsindicatie
- RS-stocknr.:
- 806-3490
- Fabrikantnummer:
- FDMC7208S
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | WDFN | |
| Series | PowerTrench, SyncFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.9W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.82V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Length | 3mm | |
| Height | 0.75mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type WDFN | ||
Series PowerTrench, SyncFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.9W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.82V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Length 3mm | ||
Height 0.75mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® SyncFET™ Dual MOSFET, Fairchild Semiconductor
Designed to minimise losses in power conversion, while maintaining excellent switching performance
High Performance Trench Technology for extremely low RDS(on)
SyncFET™ benefits from an efficient Schottky body diode
Applications in Synchronous Rectification DC-DC Converter, Motor Drives, networking point of load Low Side Switch
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Gerelateerde Links
- onsemi Isolated PowerTrench, SyncFET 2 Type N-Channel MOSFET, 16 A, 30 V Enhancement, 8-Pin WDFN
- onsemi PowerTrench Type N-Channel MOSFET, 16 A, 100 V Enhancement, 8-Pin WDFN
- onsemi PowerTrench Type N-Channel MOSFET, 7.5 A, 100 V Enhancement, 8-Pin WDFN
- onsemi PowerTrench Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin WDFN
- onsemi PowerTrench Type N-Channel MOSFET, 122 A, 80 V Enhancement, 8-Pin WDFN
- onsemi PowerTrench Type N-Channel MOSFET, 130 A, 80 V Enhancement, 8-Pin WDFN
- onsemi PowerTrench Type N-Channel MOSFET, 80 A, 40 V Enhancement, 8-Pin WDFN
- onsemi PowerTrench Type N-Channel MOSFET, 76 A, 80 V Enhancement, 8-Pin WDFN