onsemi NVF6P02 Type P-Channel MOSFET, 8.4 A, 20 V Enhancement, 3-Pin SOT-223 NVF6P02T3G
- RS-stocknr.:
- 805-1996
- Fabrikantnummer:
- NVF6P02T3G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 rol van 10 eenheden)*
€ 7,52
(excl. BTW)
€ 9,10
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tekort aan aanbod
- 3.170 stuk(s) klaar voor verzending vanaf een andere locatie
Onze huidige voorraad is beperkt en onze leveranciers verwachten tekorten.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 0,752 | € 7,52 |
| 100 - 240 | € 0,647 | € 6,47 |
| 250 - 490 | € 0,562 | € 5,62 |
| 500 - 990 | € 0,495 | € 4,95 |
| 1000 + | € 0,45 | € 4,50 |
*prijsindicatie
- RS-stocknr.:
- 805-1996
- Fabrikantnummer:
- NVF6P02T3G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 8.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-223 | |
| Series | NVF6P02 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 8.3W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Height | 1.65mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 8.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-223 | ||
Series NVF6P02 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 8.3W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Height 1.65mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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