IXYS HiperFET, Polar3 N-Channel MOSFET, 98 A, 500 V, 3-Pin PLUS247 IXFX98N50P3
- RS-stocknr.:
- 802-4506
- Fabrikantnummer:
- IXFX98N50P3
- Fabrikant:
- IXYS
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 21,67
(excl. BTW)
€ 26,22
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 21,67 |
| 10 - 49 | € 18,66 |
| 50 - 99 | € 16,45 |
| 100 - 199 | € 16,06 |
| 200 + | € 15,65 |
*prijsindicatie
- RS-stocknr.:
- 802-4506
- Fabrikantnummer:
- IXFX98N50P3
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 98 A | |
| Maximum Drain Source Voltage | 500 V | |
| Series | HiperFET, Polar3 | |
| Package Type | PLUS247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 50 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Maximum Power Dissipation | 1.3 kW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 5.21mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 16.13mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 197 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 21.34mm | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 98 A | ||
Maximum Drain Source Voltage 500 V | ||
Series HiperFET, Polar3 | ||
Package Type PLUS247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 50 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Maximum Power Dissipation 1.3 kW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 5.21mm | ||
Maximum Operating Temperature +150 °C | ||
Length 16.13mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 197 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 21.34mm | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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