IXYS Type N-Channel MOSFET, 22 A, 600 V Enhancement, 3-Pin TO-220 IXFP22N60P3
- RS-stocknr.:
- 802-4427
- Fabrikantnummer:
- IXFP22N60P3
- Fabrikant:
- IXYS
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 11,61
(excl. BTW)
€ 14,048
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 294 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 5,805 | € 11,61 |
| 20 - 38 | € 3,625 | € 7,25 |
| 40 - 98 | € 3,275 | € 6,55 |
| 100 - 498 | € 2,855 | € 5,71 |
| 500 + | € 2,81 | € 5,62 |
*prijsindicatie
- RS-stocknr.:
- 802-4427
- Fabrikantnummer:
- IXFP22N60P3
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.83 mm | |
| Length | 10.66mm | |
| Height | 16mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Width 4.83 mm | ||
Length 10.66mm | ||
Height 16mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Gerelateerde Links
- IXYS Type N-Channel MOSFET, 22 A, 600 V Enhancement, 3-Pin TO-220
- IXYS Type N-Channel MOSFET, 22 A, 600 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET, 22 A, 600 V Enhancement, 3-Pin TO-247 IXFH22N60P3
- IXYS Polar3 Type N-Channel Power MOSFET, 14 A, 600 V Enhancement, 3-Pin TO-220
- IXYS Polar3 Type N-Channel Power MOSFET, 14 A, 600 V Enhancement, 3-Pin TO-220 IXFP14N60P3
- IXYS Type N-Channel MOSFET, 600 A, 40 V Enhancement, 24-Pin SMPD
- IXYS Type N-Channel MOSFET, 110 A, 600 V Enhancement, 3-Pin PLUS264
- IXYS Type N-Channel MOSFET, 80 A, 600 V Enhancement, 3-Pin PLUS247