onsemi RFD3055LESM N-Channel MOSFET, 11 A, 60 V Enhancement, 3-Pin TO-252 RFD3055LESM9A
- RS-stocknr.:
- 802-2159
- Fabrikantnummer:
- RFD3055LESM9A
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 10 eenheden)*
€ 3,74
(excl. BTW)
€ 4,53
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 130 stuk(s) vanaf 12 oktober 2026
- Plus verzending 3.190 stuk(s) vanaf 19 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,374 | € 3,74 |
| 100 - 240 | € 0,323 | € 3,23 |
| 250 - 490 | € 0,279 | € 2,79 |
| 500 - 990 | € 0,246 | € 2,46 |
| 1000 + | € 0,224 | € 2,24 |
*prijsindicatie
- RS-stocknr.:
- 802-2159
- Fabrikantnummer:
- RFD3055LESM9A
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | RFD3055LESM | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 107mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.4nC | |
| Maximum Power Dissipation Pd | 38W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -16V, +16V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Width | 6.22mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series RFD3055LESM | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 107mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.4nC | ||
Maximum Power Dissipation Pd 38W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -16V, +16V | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Width 6.22mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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