IXYS Single HiperFET, Q3-Class 1 Type N-Channel MOSFET, 82 A, 600 V Enhancement, 3-Pin PLUS264 IXFB82N60Q3
- RS-stocknr.:
- 801-1370
- Fabrikantnummer:
- IXFB82N60Q3
- Fabrikant:
- IXYS
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 38,58
(excl. BTW)
€ 46,68
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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- Verzending vanaf 19 oktober 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 38,58 |
| 5 - 9 | € 35,17 |
| 10 - 24 | € 34,28 |
| 25 + | € 31,52 |
*prijsindicatie
- RS-stocknr.:
- 801-1370
- Fabrikantnummer:
- IXFB82N60Q3
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 82A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | HiperFET, Q3-Class | |
| Package Type | PLUS264 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.31 mm | |
| Height | 26.59mm | |
| Length | 20.29mm | |
| Number of Elements per Chip | 1 | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 82A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series HiperFET, Q3-Class | ||
Package Type PLUS264 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Width 5.31 mm | ||
Height 26.59mm | ||
Length 20.29mm | ||
Number of Elements per Chip 1 | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
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