onsemi 2V7002K N-Channel MOSFET, 320 mA, 60 V Enhancement, 3-Pin SOT-23 2V7002KT1G
- RS-stocknr.:
- 800-9361
- Fabrikantnummer:
- 2V7002KT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 200 eenheden)*
€ 15,20
(excl. BTW)
€ 18,40
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 18 oktober 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 200 - 800 | € 0,076 | € 15,20 |
| 1000 - 1800 | € 0,066 | € 13,20 |
| 2000 + | € 0,057 | € 11,40 |
*prijsindicatie
- RS-stocknr.:
- 800-9361
- Fabrikantnummer:
- 2V7002KT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 320mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2V7002K | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 800mV | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.7nC | |
| Maximum Power Dissipation Pd | 420mW | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Height | 1.01mm | |
| Standards/Approvals | No | |
| Width | 1.4mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 320mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2V7002K | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 800mV | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.7nC | ||
Maximum Power Dissipation Pd 420mW | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Height 1.01mm | ||
Standards/Approvals No | ||
Width 1.4mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET with Schottky Diode, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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