Nexperia Type N-Channel MOSFET, 100 A, 30 V Enhancement, 3-Pin TO-220 PSMN1R8-30PL,127
- RS-stocknr.:
- 798-2924
- Fabrikantnummer:
- PSMN1R8-30PL,127
- Fabrikant:
- Nexperia
Subtotaal (1 verpakking van 2 eenheden)*
€ 3,86
(excl. BTW)
€ 4,68
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 18 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 4.640 stuk(s) vanaf 05 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 + | € 1,93 | € 3,86 |
*prijsindicatie
- RS-stocknr.:
- 798-2924
- Fabrikantnummer:
- PSMN1R8-30PL,127
- Fabrikant:
- Nexperia
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 170nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 270W | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.7 mm | |
| Standards/Approvals | No | |
| Height | 16mm | |
| Length | 10.3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 170nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 270W | ||
Maximum Operating Temperature 175°C | ||
Width 4.7 mm | ||
Standards/Approvals No | ||
Height 16mm | ||
Length 10.3mm | ||
Automotive Standard No | ||
- Land van herkomst:
- PH
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
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