Nexperia Type N-Channel MOSFET, 100 A, 30 V Enhancement, 4-Pin SOT-669 PSMN1R2-30YLC,115
- RS-stocknr.:
- 798-2906
- Fabrikantnummer:
- PSMN1R2-30YLC,115
- Fabrikant:
- Nexperia
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 5,86
(excl. BTW)
€ 7,09
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending 13.415 stuk(s) vanaf 08 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,172 | € 5,86 |
| 50 - 120 | € 1,074 | € 5,37 |
| 125 - 245 | € 1,016 | € 5,08 |
| 250 - 495 | € 0,928 | € 4,64 |
| 500 + | € 0,854 | € 4,27 |
*prijsindicatie
- RS-stocknr.:
- 798-2906
- Fabrikantnummer:
- PSMN1R2-30YLC,115
- Fabrikant:
- Nexperia
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-669 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.65mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 215W | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.1 mm | |
| Length | 5mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-669 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.65mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 215W | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.1 mm | ||
Length 5mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
- Land van herkomst:
- PH
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
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