Vishay SQ Rugged Type N-Channel MOSFET, 40 A, 60 V Enhancement, 3-Pin TO-252 SQD40N06-14L_GE3
- RS-stocknr.:
- 787-9484
- Fabrikantnummer:
- SQD40N06-14L_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 8,90
(excl. BTW)
€ 10,75
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Laatste voorraad RS
- Plus verzending 20 stuk(s) vanaf 02 februari 2026
- Plus verzending 125 stuk(s) vanaf 02 februari 2026
- Laatste verzending 1.795 stuk(s) vanaf 09 februari 2026
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,78 | € 8,90 |
| 50 - 120 | € 1,604 | € 8,02 |
| 125 - 245 | € 1,514 | € 7,57 |
| 250 - 495 | € 1,426 | € 7,13 |
| 500 + | € 1,336 | € 6,68 |
*prijsindicatie
- RS-stocknr.:
- 787-9484
- Fabrikantnummer:
- SQD40N06-14L_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | SQ Rugged | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 75W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.38mm | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series SQ Rugged | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 75W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.38mm | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
Gerelateerde Links
- Vishay SQ Rugged Type N-Channel MOSFET, 40 A, 60 V Enhancement, 3-Pin TO-252
- Vishay SQ Rugged Type P-Channel MOSFET, 11 A, 60 V Enhancement, 3-Pin TO-252
- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET, 25 A, 60 V Enhancement, 3-Pin TO-252
- Vishay SQ Rugged Type P-Channel MOSFET, 11 A, 60 V Enhancement, 3-Pin TO-252 SQD19P06-60L_GE3
- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET, 25 A, 60 V Enhancement, 3-Pin TO-252 SQD25N06-22L_GE3
- Vishay SQ Rugged Type P-Channel MOSFET, 50 A, 30 V Enhancement, 3-Pin TO-252
- Vishay SQ Rugged Type N-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin SOIC
- Vishay SQ Rugged Type P-Channel MOSFET, 50 A, 30 V Enhancement, 3-Pin TO-252 SQD45P03-12_GE3
