Vishay SQ Rugged N-Channel TrenchFET Power MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 SQ2310ES-T1_BE3
- RS-stocknr.:
- 787-9443
- Fabrikantnummer:
- SQ2310ES-T1_BE3
- Fabrikant:
- Vishay
Subtotaal (1 verpakking van 10 eenheden)*
€ 1,87
(excl. BTW)
€ 2,26
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Wordt opgeheven
- Plus verzending 10 stuk(s) vanaf 21 september 2026
- Laatste verzending 560 stuk(s) vanaf 28 september 2026
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 + | € 0,187 | € 1,87 |
*prijsindicatie
- RS-stocknr.:
- 787-9443
- Fabrikantnummer:
- SQ2310ES-T1_BE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | TrenchFET Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | SQ Rugged | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.03Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 8.5nC | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Width | 1.4mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS: 2002/95/EC | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type TrenchFET Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series SQ Rugged | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.03Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 8.5nC | ||
Maximum Gate Source Voltage Vgs 8V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 1.02mm | ||
Length 3.04mm | ||
Width 1.4mm | ||
Standards/Approvals IEC 61249-2-21, RoHS: 2002/95/EC | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
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