STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 33 A, 650 V Enhancement, 3-Pin TO-263
- RS-stocknr.:
- 761-0402P
- Fabrikantnummer:
- STB42N65M5
- Fabrikant:
- STMicroelectronics
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€ 8,70
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 7,19 |
*prijsindicatie
- RS-stocknr.:
- 761-0402P
- Fabrikantnummer:
- STB42N65M5
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | MDmesh M5 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 79mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 190W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.75mm | |
| Height | 4.6mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series MDmesh M5 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 79mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 190W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.75mm | ||
Height 4.6mm | ||
Automotive Standard No | ||
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.