STMicroelectronics MDmesh M5 N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-247
- RS-stocknr.:
- 761-0317P
- Fabrikantnummer:
- STW30N65M5
- Fabrikant:
- STMicroelectronics
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| 100 - 599 | € 3,13 |
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*prijsindicatie
- RS-stocknr.:
- 761-0317P
- Fabrikantnummer:
- STW30N65M5
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | MDmesh M5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 139mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -25V, +25V | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 140W | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.15mm | |
| Length | 15.75mm | |
| Width | 5.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series MDmesh M5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 139mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -25V, +25V | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 140W | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Maximum Operating Temperature 150°C | ||
Height 20.15mm | ||
Length 15.75mm | ||
Width 5.15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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