STMicroelectronics FDmesh Type N-Channel Power MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-220 STP11NM60ND
- RS-stocknr.:
- 760-9982
- Fabrikantnummer:
- STP11NM60ND
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 2,04
(excl. BTW)
€ 2,47
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending 6 stuk(s) vanaf 08 januari 2026
- Plus verzending 1 stuk(s) vanaf 09 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 2,04 |
| 10 - 99 | € 1,73 |
| 100 - 499 | € 1,38 |
| 500 - 999 | € 1,28 |
| 1000 + | € 1,24 |
*prijsindicatie
- RS-stocknr.:
- 760-9982
- Fabrikantnummer:
- STP11NM60ND
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | FDmesh | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.45Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 90W | |
| Maximum Gate Source Voltage Vgs | ±25 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 15.75mm | |
| Width | 4.6 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series FDmesh | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.45Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 90W | ||
Maximum Gate Source Voltage Vgs ±25 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 15.75mm | ||
Width 4.6 mm | ||
Automotive Standard No | ||
N-Channel FDmesh™ Power MOSFET, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Gerelateerde Links
- STMicroelectronics FDmesh Type N-Channel Power MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics FDmesh Type N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics FDmesh Type N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-220 STP20NM60FD
- STMicroelectronics FDmesh Type N-Channel FDmesh II Power MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-220FP
- STMicroelectronics FDmesh Type N-Channel FDmesh II Power MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-220FP STF11NM60ND
- STMicroelectronics FDmesh Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252
- STMicroelectronics FDmesh Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247
- STMicroelectronics FDmesh Type N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-247