STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 13.5 A, 600 V, 3-Pin D2PAK STB14NK60ZT4
- RS-stocknr.:
- 760-9812P
- Fabrikantnummer:
- STB14NK60ZT4
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal 25 eenheden (geleverd op een doorlopende strip)*
€ 64,20
(excl. BTW)
€ 77,675
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk |
|---|---|
| 25 - 120 | € 2,568 |
| 125 - 245 | € 2,224 |
| 250 - 495 | € 2,108 |
| 500 + | € 1,892 |
*prijsindicatie
- RS-stocknr.:
- 760-9812P
- Fabrikantnummer:
- STB14NK60ZT4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 13.5 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | MDmesh, SuperMESH | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 500 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 160 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Length | 10.75mm | |
| Typical Gate Charge @ Vgs | 75 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 10.4mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Height | 4.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 13.5 A | ||
Maximum Drain Source Voltage 600 V | ||
Series MDmesh, SuperMESH | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 500 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 160 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 10.75mm | ||
Typical Gate Charge @ Vgs 75 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 10.4mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Height 4.6mm | ||
Minimum Operating Temperature -55 °C | ||