onsemi PowerTrench Type P-Channel MOSFET, 55 A, 35 V Enhancement, 3-Pin TO-252 FDD6637
- RS-stocknr.:
- 759-9093
- Fabrikantnummer:
- FDD6637
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 9,95
(excl. BTW)
€ 12,05
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tekort aan aanbod
- Plus verzending 2.960 stuk(s) vanaf 31 augustus 2026
Onze huidige voorraad is beperkt en onze leveranciers verwachten tekorten.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,99 | € 9,95 |
| 50 - 95 | € 1,716 | € 8,58 |
| 100 - 495 | € 1,488 | € 7,44 |
| 500 - 995 | € 1,306 | € 6,53 |
| 1000 + | € 1,188 | € 5,94 |
*prijsindicatie
- RS-stocknr.:
- 759-9093
- Fabrikantnummer:
- FDD6637
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 35V | |
| Package Type | TO-252 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 19mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -0.8V | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 57W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 35V | ||
Package Type TO-252 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 19mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -0.8V | ||
Maximum Gate Source Voltage Vgs 25V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 57W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Length 6.73mm | ||
Width 6.22mm | ||
Automotive Standard No | ||
Automotive P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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