onsemi PowerTrench N-Channel MOSFET, 50 A, 250 V Enhancement, 3-Pin TO-263 FDB2710
- RS-stocknr.:
- 759-8961
- Fabrikantnummer:
- FDB2710
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 5,94
(excl. BTW)
€ 7,19
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- 657 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 5,94 |
| 10 - 99 | € 5,12 |
| 100 - 499 | € 4,45 |
| 500 + | € 3,91 |
*prijsindicatie
- RS-stocknr.:
- 759-8961
- Fabrikantnummer:
- FDB2710
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-263 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Maximum Power Dissipation Pd | 260W | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Width | 11.33mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-263 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Maximum Power Dissipation Pd 260W | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Maximum Operating Temperature 150°C | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Width 11.33mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
PowerTrench® N-Channel MOSFET, 20A to 59.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Gerelateerde Links
- onsemi PowerTrench N-Channel MOSFET, 50 A, 250 V Enhancement, 3-Pin TO-263 FDB2710
- onsemi PowerTrench N-Channel MOSFET, 110 A, 60 V Enhancement, 3-Pin TO-263
- onsemi PowerTrench N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-263
- onsemi PowerTrench N-Channel MOSFET, 110 A, 60 V Enhancement, 3-Pin TO-263 NTBS2D7N06M7
- onsemi PowerTrench N-Channel MOSFET, 79 A, 150 V Enhancement, 3-Pin TO-263 FDB2532
- onsemi PowerTrench N-Channel MOSFET, 130 A, 150 V Enhancement, 3-Pin TO-263 FDB075N15A
- onsemi PowerTrench N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-263 FDB035AN06A0
- onsemi PowerTrench N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-263 FDB050AN06A0
