Infineon OptiMOS 3 Type N-Channel MOSFET, 64 A, 250 V Enhancement, 3-Pin TO-220 IPP200N25N3GXKSA1

RS-stocknr.:: 754-5500
Fabrikantnummer:: IPP200N25N3GXKSA1
Fabrikant:: Infineon

Infineon OptiMOS 3 Type N-Channel MOSFET, 64 A, 250 V Enhancement, 3-Pin TO-220 IPP200N25N3GXKSA1

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RS-stocknr.:: 754-5500
Fabrikantnummer:: IPP200N25N3GXKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	64A
	Maximum Drain Source Voltage Vds	250V
	Package Type	TO-220
	Series	OptiMOS 3
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	20mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	64nC
	Maximum Power Dissipation Pd	300W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	10.36mm
	Height	4.57mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 64A
	Maximum Drain Source Voltage Vds 250V
	Package Type TO-220
	Series OptiMOS 3
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 20mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 64nC
	Maximum Power Dissipation Pd 300W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 10.36mm
	Height 4.57mm
	Automotive Standard No

Infineon OptiMOS 3 Series MOSFET, 250V Drain Source Voltage, 64A Continuous Drain Current - IPP200N25N3GXKSA1

This MOSFET is a power-switching transistor designed for high-voltage, high-current applications where through‑hole mounting is required. It operates across a very wide temperature range and provides a gate‑controlled N‑channel enhancement mode suitable for power conversion and motor‑drive contexts. The device integrates robust gate tolerance and is configured for conventional single‑supply gate‑drive arrangements.

Features and Benefits:

• 250V drain-source withstand voltage enables high‑voltage designs
• 64A continuous drain current supports heavy current loads
• 20 mΩ low RDS(on) reduces conduction losses in power paths
• 64 nC typical gate charge balances switching speed and drive requirements
• 300W maximum power dissipation allows significant load handling
• VGS rating 20V accommodates common gate‑drive voltages

Applications

• Suitable for industrial motor‑drive power stages
• Ideal for switch‑mode power supplies and converters
• Used with high‑voltage battery management systems
• Can be used for audio amplifier output‑stage switching
• Suitable for lab prototyping with through‑hole assemblies

What mounting method does it require for assembly?

It is supplied in a TO‑220 package intended for through‑hole mounting and can be secured to heatsinks using the package tab.

How does temperature capability affect deployment options?

The device is specified to operate from -55 °C up to 175 °C, permitting use in environments with extreme ambient or elevated junction temperatures.

What gate‑drive considerations should be made for switching applications?

With a maximum gate-source voltage of 20V and a typical gate charge of 64 nC, designers should size gate drivers to provide sufficient peak current for desired switching speeds while limiting VGS excursions.

What conduction performance can be expected under heavy load?

Conduction losses are minimised by a maximum drain-source resistance of 20 mΩ, improving thermal management when carrying high currents.