N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Infineon 2N7002H6327XTSA2
- RS-stocknr.:
- 752-7773P
- Fabrikantnummer:
- 2N7002H6327XTSA2
- Fabrikant:
- Infineon
Bekijk alle MOSFETs
39400 op voorraad - levertijd is 1 werkdag(en).
Prijs Each (Supplied on a Reel) Quantities below 150 on continuous strip
0,168 €
(excl. BTW)
0,203 €
(incl. BTW)
| Aantal stuks | Per stuk |
| 200 - 400 | 0,168 € |
| 500 - 900 | 0,127 € |
| 1000 - 1900 | 0,076 € |
| 2000 + | 0,073 € |
Verpakkingsopties
- RS-stocknr.:
- 752-7773P
- Fabrikantnummer:
- 2N7002H6327XTSA2
- Fabrikant:
- Infineon
Wetgeving en conformiteit
Productomschrijving
Infineon OptiMOS™ Small Signal MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
| Kenmerk | Waarde |
| Channel Type | N |
| Maximum Continuous Drain Current | 300 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 500 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 1.3mm |
| Transistor Material | Si |
| Length | 2.9mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 0.4 nC @ 10 V |
| Series | OptiMOS |
| Height | 1mm |
| Minimum Operating Temperature | -55 °C |