onsemi MMBF170L Type N-Channel MOSFET, 500 mA, 60 V Enhancement, 3-Pin SOT-23 MMBF170
- RS-stocknr.:
- 739-0357
- Fabrikantnummer:
- MMBF170
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 1,48
(excl. BTW)
€ 1,79
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tekort aan aanbod
- 180 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 8.450 stuk(s) vanaf 12 januari 2026
Onze huidige voorraad is beperkt en onze leveranciers verwachten tekorten.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,148 | € 1,48 |
| 100 - 240 | € 0,127 | € 1,27 |
| 250 - 490 | € 0,11 | € 1,10 |
| 500 - 990 | € 0,097 | € 0,97 |
| 1000 + | € 0,089 | € 0,89 |
*prijsindicatie
- RS-stocknr.:
- 739-0357
- Fabrikantnummer:
- MMBF170
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 500mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | MMBF170L | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 300mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.92mm | |
| Width | 1.3 mm | |
| Height | 0.93mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 500mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series MMBF170L | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 300mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.92mm | ||
Width 1.3 mm | ||
Height 0.93mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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