onsemi Isolated 2 Type N-Channel Power MOSFET, 510 mA, 50 V Enhancement, 6-Pin SOT-23 NDC7002N

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Verpakkingsopties
RS-stocknr.:
739-0161
Fabrikantnummer:
NDC7002N
Fabrikant:
onsemi
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Merk

onsemi

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

510mA

Maximum Drain Source Voltage Vds

50V

Package Type

SOT-23

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

4Ω

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Typical Gate Charge Qg @ Vgs

1nC

Maximum Power Dissipation Pd

960mW

Forward Voltage Vf

0.8V

Maximum Gate Source Voltage Vgs

20 V

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Height

1mm

Width

1.7 mm

Length

3mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

Enhancement Mode Dual MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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