Vishay Si2325DS Type P-Channel MOSFET, 530 mA, 150 V Enhancement, 3-Pin SOT-23 SI2325DS-T1-E3
- RS-stocknr.:
- 710-3263
- Fabrikantnummer:
- SI2325DS-T1-E3
- Fabrikant:
- Vishay
Subtotaal (1 verpakking van 5 eenheden)*
€ 5,14
(excl. BTW)
€ 6,22
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 15 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 2.095 stuk(s) vanaf 09 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 + | € 1,028 | € 5,14 |
*prijsindicatie
- RS-stocknr.:
- 710-3263
- Fabrikantnummer:
- SI2325DS-T1-E3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 530mA | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | SOT-23 | |
| Series | Si2325DS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 750mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 7.7nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 530mA | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type SOT-23 | ||
Series Si2325DS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 750mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 7.7nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Gerelateerde Links
- Vishay Si2325DS Type P-Channel MOSFET, 530 mA, 150 V Enhancement, 3-Pin SOT-23
- Vishay TP0610K Type P-Channel MOSFET, 0.19 A, 60 V Enhancement, 3-Pin SOT-23 TP0610K-T1-E3
- Vishay TrenchFET Type P-Channel MOSFET, 3.1 A, 20 V Enhancement, 3-Pin SOT-23 SI2301CDS-T1-E3
- Vishay Si2328DS Type N-Channel MOSFET, 1.15 A, 100 V Enhancement, 3-Pin SOT-23 SI2328DS-T1-E3
- Vishay TrenchFET Type N-Channel Power MOSFET, 2.3 A, 60 V Enhancement, 3-Pin SOT-23 SI2308BDS-T1-E3
- Vishay P-Channel MOSFET Transistor, 2.2 A, 20 V, 3-Pin SOT-23 SI2301BDS-T1-E3
- Vishay TP0610K Type P-Channel MOSFET, 0.19 A, 60 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET, 3.1 A, 20 V Enhancement, 3-Pin SOT-23