Vishay IRF9Z34 Type P-Channel Power MOSFET, 18 A, 60 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 708-4755
- Fabrikantnummer:
- IRF9Z34PBF
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 9,64
(excl. BTW)
€ 11,665
(incl. BTW)
Voeg 40 eenheden toe voor gratis bezorging
Laatste voorraad RS
- 10 stuk(s) klaar voor verzending vanaf een andere locatie
- Laatste verzending 30 stuk(s) vanaf 26 februari 2026
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,928 | € 9,64 |
| 50 - 120 | € 1,736 | € 8,68 |
| 125 - 245 | € 1,544 | € 7,72 |
| 250 - 495 | € 1,448 | € 7,24 |
| 500 + | € 1,348 | € 6,74 |
*prijsindicatie
- RS-stocknr.:
- 708-4755
- Fabrikantnummer:
- IRF9Z34PBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | IRF9Z34 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.14Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 88W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -6.3V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.7 mm | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series IRF9Z34 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.14Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 88W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -6.3V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 4.7 mm | ||
Height 9.01mm | ||
Length 10.41mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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