DiodesZetex Isolated 2 Type N-Channel MOSFET, 115 mA, 60 V Enhancement, 6-Pin SC-88 2N7002DW-7-F
- RS-stocknr.:
- 708-2529
- Fabrikantnummer:
- 2N7002DW-7-F
- Fabrikant:
- DiodesZetex
Subtotaal (1 verpakking van 25 eenheden)*
€ 3,05
(excl. BTW)
€ 3,70
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 275 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 392.500 stuk(s) vanaf 12 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 + | € 0,122 | € 3,05 |
*prijsindicatie
- RS-stocknr.:
- 708-2529
- Fabrikantnummer:
- 2N7002DW-7-F
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 115mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 13.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 200mW | |
| Forward Voltage Vf | 0.78V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | UL 94V-0, MIL-STD-202, RoHS, AEC-Q101 Standards, J-STD-020C | |
| Width | 1.35 mm | |
| Height | 1mm | |
| Length | 2.2mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 115mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 13.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 200mW | ||
Forward Voltage Vf 0.78V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals UL 94V-0, MIL-STD-202, RoHS, AEC-Q101 Standards, J-STD-020C | ||
Width 1.35 mm | ||
Height 1mm | ||
Length 2.2mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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