Infineon HEXFET Type N-Channel MOSFET, 270 A, 60 V Enhancement, 3-Pin TO-220

RS-stocknr.:: 688-7213
Artikelnummer Distrelec:: 304-43-458
Fabrikantnummer:: IRLB3036PBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 270 A, 60 V Enhancement, 3-Pin TO-220

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RS-stocknr.:: 688-7213
Artikelnummer Distrelec:: 304-43-458
Fabrikantnummer:: IRLB3036PBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	270A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	2mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	380W
	Typical Gate Charge Qg @ Vgs	91nC
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	10.67mm
	Standards/Approvals	No
	Height	9.02mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 270A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 2mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 380W
	Typical Gate Charge Qg @ Vgs 91nC
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 10.67mm
	Standards/Approvals No
	Height 9.02mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 60V Maximum Drain Source Voltage, 270A Maximum Continuous Drain Current - IRLB3036PBF

This MOSFET is a power-switching transistor designed for high-current, low-loss switching in industrial environments. It is an N-channel enhancement device housed in a through-hole TO-220 package, intended for applications requiring substantial continuous drain current and robust thermal endurance across a wide ambient range.

Features and Benefits:

• Very low on-resistance 2 mΩ for reduced conduction losses
• High continuous drain current 270A to handle heavy loads
• 380W maximum power dissipation for high-power switching
• 60V drain-source voltage rating for moderate-voltage systems
• Typical gate charge 91 nC enabling predictable switching behaviour

Applications

• Suitable for motor-drive stages in industrial equipment
• Ideal for power supplies and DC-DC converters
• Used with high-current switching in battery management
• Can be used for inverter output stages in medium-voltage systems

What gate voltage limits must be observed?

The device must not exceed ±16V between gate and source to avoid gate-oxide stress.

How does thermal range affect deployment?

It operates across -55 °C to 175 °C, permitting use in harsh thermal conditions and elevated junction scenarios.

What is the forward conduction characteristic when the body diode conducts?

The forward voltage is typically 1.3V during diode conduction, influencing loss calculations in synchronous or freewheeling intervals.

What package and mounting considerations apply for heat dissipation?

It is supplied in a TO-220 through-hole format which facilitates direct heatsink attachment for improved thermal management.