Infineon HEXFET N-Channel MOSFET Transistor, 93 A, 20 V, 3-Pin IPAK IRFU3711ZPBF

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€ 2,805

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RS-stocknr.:
688-7140
Fabrikantnummer:
IRFU3711ZPBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

N

Maximum Continuous Drain Current

93 A

Maximum Drain Source Voltage

20 V

Package Type

IPAK

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.45V

Minimum Gate Threshold Voltage

1.55V

Maximum Power Dissipation

79 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

2.3mm

Length

6.6mm

Typical Gate Charge @ Vgs

18 nC @ 4.5 V

Height

6.1mm

Minimum Operating Temperature

-55 °C

Land van herkomst:
MX

N-Channel Power MOSFET 12V to 25V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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