Infineon HEXFET Type N-Channel Power MOSFET, 171 A, 150 V Enhancement, 3-Pin TO-247AC IRFP4568PBF

RS-stocknr.:: 688-7018
Artikelnummer Distrelec:: 302-84-053
Fabrikantnummer:: IRFP4568PBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel Power MOSFET, 171 A, 150 V Enhancement, 3-Pin TO-247AC IRFP4568PBF

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RS-stocknr.:: 688-7018
Artikelnummer Distrelec:: 302-84-053
Fabrikantnummer:: IRFP4568PBF
Fabrikant:: Infineon

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Wetgeving en conformiteit

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	171A
	Maximum Drain Source Voltage Vds	150V
	Series	HEXFET
	Package Type	TO-247AC
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	5.9mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	684W
	Maximum Gate Source Voltage Vgs	30V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	151nC
	Maximum Operating Temperature	175°C
	Width	5.31mm
	Standards/Approvals	No
	Height	20.7mm
	Length	15.87mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 171A
	Maximum Drain Source Voltage Vds 150V
	Series HEXFET
	Package Type TO-247AC
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 5.9mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 684W
	Maximum Gate Source Voltage Vgs 30V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 151nC
	Maximum Operating Temperature 175°C
	Width 5.31mm
	Standards/Approvals No
	Height 20.7mm
	Length 15.87mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 171A Maximum Continuous Drain Current, 517W Maximum Power Dissipation - IRFP4568PBF

This N-channel MOSFET is designed for high efficiency and consistent performance across various electronic circuits. Its robust features cater to power management and switching applications. The TO-247AC package facilitates effective thermal management and simplifies installation in through-hole configurations.

Features & Benefits

• Enhanced body diode recovery characteristics improve reliability

• Low on-resistance minimises power losses during operation

• Maximum power dissipation capability of 517 W accommodates high-demand application.

• Wide operating temperature range of -55°C to +175°C ensures functionality in diverse environment.

• Excellent gate threshold voltages optimise performance during switching actions.

• Single transistor configuration streamlines circuit designs for ease of use

Applications

• High-efficiency synchronous rectification

• Uninterruptible power supplies for dependable backup

• High-speed power switching circuits

• Suitable for hard-switched and high-frequency

What is the maximum continuous drain current this device can support?

The device supports a maximum continuous drain current of 171 A under optimal conditions.

How does the device manage heat during operation?

With a maximum power dissipation of 517W, the device effectively handles heat generated during operation.

What are the typical gate charge requirements?

The typical gate charge is approximately 151 nC at a gate-to-source voltage of 10 V, ensuring efficient switching performance.

Can it withstand extreme temperature variations?

Yes, it operates within a temperature range of -55°C to +175°C, making it suitable for various environmental conditions.

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