Fairchild UniFET N-Channel MOSFET, 52 A, 200 V, 3-Pin TO-220AB FDP52N20
- RS-stocknr.:
- 671-4847
- Fabrikantnummer:
- FDP52N20
- Fabrikant:
- Fairchild Semiconductor
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RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 671-4847
- Fabrikantnummer:
- FDP52N20
- Fabrikant:
- Fairchild Semiconductor
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Fairchild Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 52 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TO-220AB | |
| Series | UniFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 41 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 357 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 49 nC @ 10 V | |
| Width | 4.7mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 10.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 9.4mm | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Fairchild Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 52 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-220AB | ||
Series UniFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 41 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 357 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 49 nC @ 10 V | ||
Width 4.7mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 10.1mm | ||
Maximum Operating Temperature +150 °C | ||
Height 9.4mm | ||
Minimum Operating Temperature -55 °C | ||
- Land van herkomst:
- GB
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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