onsemi PowerTrench Type N-Channel MOSFET, 11.6 A, 30 V Enhancement, 8-Pin SOIC FDS8880
- RS-stocknr.:
- 671-0728
- Fabrikantnummer:
- FDS8880
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 5,45
(excl. BTW)
€ 6,60
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Wordt opgeheven
- Laatste 35 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 1,09 | € 5,45 |
| 25 - 95 | € 0,896 | € 4,48 |
| 100 - 245 | € 0,842 | € 4,21 |
| 250 - 495 | € 0,732 | € 3,66 |
| 500 + | € 0,634 | € 3,17 |
*prijsindicatie
- RS-stocknr.:
- 671-0728
- Fabrikantnummer:
- FDS8880
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PowerTrench | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Length | 5mm | |
| Width | 4 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Length 5mm | ||
Width 4 mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Gerelateerde Links
- onsemi PowerTrench N-Channel MOSFET, 11.6 A, 30 V, 8-Pin SOIC FDS8880
- onsemi PowerTrench Type N-Channel MOSFET, 8.5 A, 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type N-Channel MOSFET, 18.5 A, 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type N-Channel MOSFET, 12.5 A, 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type N-Channel MOSFET, 15 A, 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type N-Channel MOSFET, 11 A, 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type N-Channel MOSFET, 10.2 A, 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type N-Channel MOSFET, 13 A, 30 V Enhancement, 8-Pin SOIC
