onsemi PowerTrench Type N-Channel MOSFET, 12.5 A, 30 V Enhancement, 8-Pin SOIC FDS6680A
- RS-stocknr.:
- 671-0605
- Fabrikantnummer:
- FDS6680A
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 3,55
(excl. BTW)
€ 4,30
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tekort aan aanbod
- 30 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 2.115 stuk(s) vanaf 13 januari 2026
Onze huidige voorraad is beperkt en onze leveranciers verwachten tekorten.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 0,71 | € 3,55 |
| 25 - 95 | € 0,584 | € 2,92 |
| 100 - 245 | € 0,386 | € 1,93 |
| 250 - 495 | € 0,362 | € 1,81 |
| 500 + | € 0,348 | € 1,74 |
*prijsindicatie
- RS-stocknr.:
- 671-0605
- Fabrikantnummer:
- FDS6680A
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.7V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.7V | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Width 4 mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Gerelateerde Links
- onsemi PowerTrench Type N-Channel MOSFET, 12.5 A, 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type N-Channel MOSFET, 8.5 A, 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type N-Channel MOSFET, 18.5 A, 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type N-Channel MOSFET, 15 A, 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type N-Channel MOSFET, 11 A, 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type N-Channel MOSFET, 10.2 A, 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type N-Channel MOSFET, 13 A, 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type N-Channel MOSFET, 11 A, 30 V Enhancement, 8-Pin SOIC FDS6690A