onsemi FDS Type P-Channel MOSFET, 8.8 A, 30 V Enhancement, 8-Pin SOIC FDS4435BZ
- RS-stocknr.:
- 671-0508
- Fabrikantnummer:
- FDS4435BZ
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 4,07
(excl. BTW)
€ 4,925
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tekort aan aanbod
- 170 resterend, klaar voor verzending
- 85 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 11.960 stuk(s) vanaf 26 januari 2026
Onze huidige voorraad is beperkt en onze leveranciers verwachten tekorten.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 0,814 | € 4,07 |
| 50 - 95 | € 0,70 | € 3,50 |
| 100 - 495 | € 0,608 | € 3,04 |
| 500 - 995 | € 0,536 | € 2,68 |
| 1000 + | € 0,488 | € 2,44 |
*prijsindicatie
- RS-stocknr.:
- 671-0508
- Fabrikantnummer:
- FDS4435BZ
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | FDS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Width | 4 mm | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series FDS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Width 4 mm | ||
Height 1.5mm | ||
Automotive Standard No | ||
Automotive P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Gerelateerde Links
- onsemi FDS Type P-Channel MOSFET, 8.8 A, 30 V Enhancement, 8-Pin SOIC
- onsemi FDS Type P-Channel MOSFET, 13.5 A, 20 V Enhancement, 8-Pin SOIC
- onsemi FDS Type P-Channel MOSFET, 13.5 A, 20 V Enhancement, 8-Pin SOIC FDS4465
- onsemi PowerTrench Type P-Channel MOSFET, 8.8 A, 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type P-Channel MOSFET, 8.8 A, 30 V Enhancement, 8-Pin SOIC SI4435DY
- onsemi NTMS Type P-Channel MOSFET, 11.4 A, 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type P-Channel MOSFET, 5.3 A, 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type P-Channel MOSFET, 13 A, 30 V Enhancement, 8-Pin SOIC