onsemi PowerTrench Type P-Channel MOSFET, 4 A, 30 V Enhancement, 6-Pin SOT-23 FDC658P
- RS-stocknr.:
- 671-0359
- Fabrikantnummer:
- FDC658P
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (5 eenheden, in een pakket van 5)*
€ 4,62
(excl. BTW)
€ 5,59
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- 375 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 0,924 | € 4,62 |
| 50 - 95 | € 0,796 | € 3,98 |
| 100 - 495 | € 0,692 | € 3,46 |
| 500 - 995 | € 0,608 | € 3,04 |
| 1000 + | € 0,552 | € 2,76 |
*prijsindicatie
- RS-stocknr.:
- 671-0359
- Fabrikantnummer:
- FDC658P
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Power Dissipation Pd | 1.6W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 1.7mm | |
| Length | 3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Power Dissipation Pd 1.6W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 1.7mm | ||
Length 3mm | ||
Automotive Standard No | ||
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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