Vishay SUD23N06-31 Type N-Channel MOSFET, 23 A, 60 V Enhancement, 3-Pin TO-252 SUD23N06-31-GE3

RS-stocknr.:: 636-5397P
Fabrikantnummer:: SUD23N06-31-GE3
Fabrikant:: Vishay

Vishay SUD23N06-31 Type N-Channel MOSFET, 23 A, 60 V Enhancement, 3-Pin TO-252 SUD23N06-31-GE3

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RS-stocknr.:: 636-5397P
Fabrikantnummer:: SUD23N06-31-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	23A
	Maximum Drain Source Voltage Vds	60V
	Series	SUD23N06-31
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	31mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	11nC
	Maximum Power Dissipation Pd	31.25W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	+150°C
	Width	6.22mm
	Standards/Approvals	RoHS
	Length	6.73mm
	Height	2.38mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 23A
	Maximum Drain Source Voltage Vds 60V
	Series SUD23N06-31
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 31mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 11nC
	Maximum Power Dissipation Pd 31.25W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature +150°C
	Width 6.22mm
	Standards/Approvals RoHS
	Length 6.73mm
	Height 2.38mm
	Automotive Standard No

Vishay SUD23N06-31 Series MOSFET, 60V Drain Source Voltage, 23A Continuous Drain Current - SUD23N06-31-GE3

This MOSFET is a surface-mount N-channel transistor designed to switch and control power in electronic systems. It operates at voltages up to 60V and is intended for applications requiring significant continuous current handling and moderate power dissipation in a Compact TO-252 package.

Features and Benefits:

• 23 A continuous drain current for high-current switching capability
• 31 mΩ Rds(on) for reduced conduction losses and improved efficiency
• 11 nC typical gate charge for Faster switching with lower drive requirements
• 31.25W maximum power dissipation to handle thermal stress in loaded conditions
• 20V maximum gate-source voltage for robust gate-drive headroom
• -55 °C to +150 °C operating range for wide environmental tolerance

Applications

• Suitable for DC motor drivers requiring sustained high current
• Ideal for power-conversion stages in industrial automation
• Used for load switching in power-distribution assemblies
• Can be used for switch-mode power supplies in control systems

What mounting style does it use and how does that affect assembly?

It is supplied in a TO-252 surface-mount package, enabling automated soldering processes and Compact PCB layouts.

How does the device handle thermal management on a PCB?

With 31.25W maximum dissipation, it requires adequate copper area or thermal vias to spread heat from the package to the board.

What gate-drive considerations are necessary for reliable operation?

Gate drive must remain within ±20V relative to source and provide sufficient charge delivery to reach the typical 11 nC gate charge for the desired switching speed.

What electrical limits must be observed during design?

Ensure that the drain-source voltage never exceeds 60V and that continuous drain current does not surpass 23 A under the intended cooling conditions.