IRLZ34NPBF N-Channel MOSFET, 30 A, 55 V HEXFET, 3-Pin TO-220AB Infineon

  • RS-stocknr. 541-1247
  • Fabrikantnummer IRLZ34NPBF
  • Fabrikant Infineon
Datasheets
Wetgeving en conformiteit
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Productomschrijving

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specificaties
Kenmerk Waarde
Channel Type N
Maximum Continuous Drain Current 30 A
Maximum Drain Source Voltage 55 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 35 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 68 W
Transistor Configuration Single
Maximum Gate Source Voltage -16 V, +16 V
Number of Elements per Chip 1
Transistor Material Si
Typical Gate Charge @ Vgs 25 nC @ 5 V
Minimum Operating Temperature -55 °C
Height 8.77mm
Series HEXFET
Maximum Operating Temperature +175 °C
184 op voorraad - levertijd is 1 werkdag(en) (EU-voorraad)
422 op voorraad - levertijd is 1 werkdag(en) (UK-voorraad)
Prijs Each
2,30
(excl. BTW)
2,78
(incl. BTW)
Aantal stuks
Per stuk
1 - 19
2,30 €
20 - 24
0,80 €
25 +
0,74 €