N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF
- RS-stocknr.:
- 541-1124
- Fabrikantnummer:
- IRFBE30PBF
- Fabrikant:
- Vishay
Bekijk alle MOSFETs
40 op voorraad - levertijd is 1 werkdag(en) (EU-voorraad)
43 op voorraad - levertijd is 3 à 5 werkdagen (UK-voorraad)
Prijs Each
2,78 €
(excl. BTW)
3,36 €
(incl. BTW)
| Aantal stuks | Per stuk |
| 1 - 9 | 2,78 € |
| 10 - 14 | 2,64 € |
| 15 - 19 | 2,58 € |
| 20 - 24 | 2,52 € |
| 25 + | 2,46 € |
Verpakkingsopties
- RS-stocknr.:
- 541-1124
- Fabrikantnummer:
- IRFBE30PBF
- Fabrikant:
- Vishay
Wetgeving en conformiteit
Productomschrijving
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Specificaties
| Kenmerk | Waarde |
| Channel Type | N |
| Maximum Continuous Drain Current | 4.1 A |
| Maximum Drain Source Voltage | 800 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 3 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 125 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Width | 4.7mm |
| Typical Gate Charge @ Vgs | 78 nC @ 10 V |
| Length | 10.41mm |
| Height | 9.01mm |
| Minimum Operating Temperature | -55 °C |