STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 53 A, 500 V Enhancement, 4-Pin ISOTOP
- RS-stocknr.:
- 485-7383
- Artikelnummer Distrelec:
- 171-00-934
- Fabrikantnummer:
- STE53NC50
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 36,68
(excl. BTW)
€ 44,38
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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- Verzending 33 stuk(s) vanaf 09 maart 2026
- Plus verzending 10 stuk(s) vanaf 25 maart 2026
- Plus verzending 20 stuk(s) vanaf 06 mei 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 36,68 |
| 10 - 49 | € 33,85 |
| 50 - 99 | € 32,30 |
| 100 - 199 | € 28,49 |
| 200 + | € 26,59 |
*prijsindicatie
- RS-stocknr.:
- 485-7383
- Artikelnummer Distrelec:
- 171-00-934
- Fabrikantnummer:
- STE53NC50
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 53A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | ISOTOP | |
| Series | MDmesh, SuperMESH | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 460W | |
| Typical Gate Charge Qg @ Vgs | 310nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.1mm | |
| Length | 38.2mm | |
| Standards/Approvals | No | |
| Width | 25.5 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 53A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type ISOTOP | ||
Series MDmesh, SuperMESH | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 460W | ||
Typical Gate Charge Qg @ Vgs 310nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 9.1mm | ||
Length 38.2mm | ||
Standards/Approvals No | ||
Width 25.5 mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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