STMicroelectronics STW65N N-Channel MOSFET, 54 A, 650 V Enhancement, 3-Pin TO-247-4 STW65N045M9-4
- RS-stocknr.:
- 287-7055P
- Fabrikantnummer:
- STW65N045M9-4
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal 10 eenheden (geleverd in een buis)*
€ 66,10
(excl. BTW)
€ 80,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- 280 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 10 - 119 | € 6,61 |
| 120 - 509 | € 6,53 |
| 510 - 1019 | € 6,44 |
| 1020 + | € 6,37 |
*prijsindicatie
- RS-stocknr.:
- 287-7055P
- Fabrikantnummer:
- STW65N045M9-4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 54A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247-4 | |
| Series | STW65N | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Power Dissipation Pd | 312W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 54A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247-4 | ||
Series STW65N | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Power Dissipation Pd 312W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics Power MOSFET is based on the most innovative super junction MDmesh M9 technology. The silicon based M9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Higher dv/dt capability
Excellent switching performance
Easy to drive
100 percent avalanche tested
Gerelateerde Links
- Pilz PNOZ X PNOZ X3 Emergency Stop Safety Relay, 24 V dc, 110V ac, Dual-Channel, 3 Safety Contacts
- RS PRO 4 Way Male 4 Pin Molex to 4 Way Female 4 Pin Molex Wire to Board Cable, 2m
- PR Electronics 4100 Series Universal Transmitter, Universal Input, Current, Voltage Output, 19.2 → 300 V dc,
- Festo Natural Round Plastic Tube x 4mm OD x 2.6mm ID x 1.4mm
- Siemens SIMATIC S7-1200 Series PLC CPU for Use with SIMATIC S7-1200 Series, Digital, Transistor Output, 14 (Digital, 2
- PR Electronics 4100 Series Universal Transmitter, Universal Input, Current, Voltage, Relay Output, 19.2 → 300 V
- Siemens LOGO! Series PLC CPU Starter Kit for Use with LOGO! V8.3, 115 V ac/dc, 230 V ac/dc Supply, Relay Output,
- Pilz PNOZ X PNOZ X1 Emergency Stop Safety Relay, 24V ac/dc, Single Channel, 3 Safety Contacts