STMicroelectronics MASTERG Type N, Type P-Channel MOSFET, 9.7 A, 650 V Enhancement, 31-Pin QFN-9 MASTERGAN1LTR
- RS-stocknr.:
- 287-7041
- Fabrikantnummer:
- MASTERGAN1LTR
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 10,81
(excl. BTW)
€ 13,08
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- 263 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 24 | € 10,81 |
| 25 - 49 | € 9,72 |
| 50 - 99 | € 8,77 |
| 100 - 249 | € 7,88 |
| 250 + | € 6,93 |
*prijsindicatie
- RS-stocknr.:
- 287-7041
- Fabrikantnummer:
- MASTERGAN1LTR
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.7A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | MASTERG | |
| Package Type | QFN-9 | |
| Mount Type | Surface | |
| Pin Count | 31 | |
| Maximum Drain Source Resistance Rds | 220mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2nC | |
| Maximum Power Dissipation Pd | 40mW | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | RoHS, ECOPACK | |
| Height | 1mm | |
| Length | 9mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.7A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series MASTERG | ||
Package Type QFN-9 | ||
Mount Type Surface | ||
Pin Count 31 | ||
Maximum Drain Source Resistance Rds 220mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2nC | ||
Maximum Power Dissipation Pd 40mW | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals RoHS, ECOPACK | ||
Height 1mm | ||
Length 9mm | ||
Automotive Standard No | ||
- Land van herkomst:
- TH
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
Zero reverse recovery loss
UVLO protection on VCC
Internal bootstrap diode
Interlocking function
Gerelateerde Links
- STMicroelectronics MASTERG Type N, Type P-Channel MOSFET, 9.7 A, 650 V Enhancement, 31-Pin QFN-9 MASTERGAN1LTR
- STMicroelectronics MASTERG Type P, Type N-Channel MOSFET, 6.5 A, 650 V Enhancement, 31-Pin QFN-9 MASTERGAN4LTR
- Infineon IPD Type N-Channel MOSFET, 31 A, 650 V Enhancement TO-252
- Infineon IPD Type N-Channel MOSFET, 31 A, 650 V Enhancement TO-252 IPD60R280PFD7SAUMA1
- Infineon CoolMOS Type N-Channel MOSFET, 31 A, 650 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET, 31 A, 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET, 31 A, 650 V Enhancement, 3-Pin TO-263 IPB60R099P7ATMA1
- Infineon CoolMOS Type N-Channel MOSFET, 31 A, 650 V Enhancement, 3-Pin TO-220 IPP60R070CFD7XKSA1