Vishay SiSS5623DN Type P-Channel MOSFET, 36.3 A, 60 V Enhancement, 8-Pin 1212-8S SISS5623DN-T1-GE3
- RS-stocknr.:
- 280-0000
- Fabrikantnummer:
- SISS5623DN-T1-GE3
- Fabrikant:
- Vishay
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Per stuk (in een verpakking 4)
€ 10,30
(excl. BTW)
€ 12,46
(incl. BTW)
- RS-stocknr.:
- 280-0000
- Fabrikantnummer:
- SISS5623DN-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36.3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | 1212-8S | |
| Series | SiSS5623DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.046Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10.1nC | |
| Maximum Power Dissipation Pd | 56.8W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36.3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type 1212-8S | ||
Series SiSS5623DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.046Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10.1nC | ||
Maximum Power Dissipation Pd 56.8W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
New generation power MOSFET
100 percent Rg and UIS tested
Ultra low RDS x Qg FOM product
Fully lead (Pb)-free device
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