Vishay SI Type N-Channel MOSFET, 17 A, 100 V Enhancement, 8-Pin SO-8 SI4190BDY-T1-GE3
- RS-stocknr.:
- 279-9895
- Fabrikantnummer:
- SI4190BDY-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 4 eenheden)*
€ 12,00
(excl. BTW)
€ 14,52
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 428 stuk(s) vanaf 20 juli 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 4 - 56 | € 3,00 | € 12,00 |
| 60 - 96 | € 2,815 | € 11,26 |
| 100 - 236 | € 2,505 | € 10,02 |
| 240 - 996 | € 2,463 | € 9,85 |
| 1000 + | € 2,415 | € 9,66 |
*prijsindicatie
- RS-stocknr.:
- 279-9895
- Fabrikantnummer:
- SI4190BDY-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SI | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.093Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 8.4W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 95nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SI | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.093Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 8.4W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 95nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
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