STMicroelectronics STW Type N-Channel MOSFET, 56 A Enhancement, 3-Pin TO-247 STWA60N043DM9
- RS-stocknr.:
- 275-1384P
- Fabrikantnummer:
- STWA60N043DM9
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
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€ 72,70
(excl. BTW)
€ 88,00
(incl. BTW)
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- Plus verzending 236 stuk(s) vanaf 03 augustus 2026
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Aantal stuks | Per stuk |
|---|---|
| 10 - 119 | € 7,27 |
| 120 - 509 | € 6,46 |
| 510 - 1019 | € 6,29 |
| 1020 + | € 6,22 |
*prijsindicatie
- RS-stocknr.:
- 275-1384P
- Fabrikantnummer:
- STWA60N043DM9
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 56A | |
| Series | STW | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 43mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 78.6nC | |
| Maximum Power Dissipation Pd | 312W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 56A | ||
Series STW | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 43mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 78.6nC | ||
Maximum Power Dissipation Pd 312W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics N-channel power MOSFET is based on the most innovative super junction MDmesh DM9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast recovery diode. The silicon based DM9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure.
Fast recovery body diode
Worldwide best RDS per area among silicon based fast recovery devices
Low gate charge, input capacitance and resistance
100 percent avalanche tested
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