STMicroelectronics N-Channel, 25 A, 750 V Enhancement, 4-Pin PowerFLAT (5 x 6) HV SGT65R65AL
- RS-stocknr.:
- 275-1318P
- Fabrikantnummer:
- SGT65R65AL
- Fabrikant:
- STMicroelectronics
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 275-1318P
- Fabrikantnummer:
- SGT65R65AL
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Package Type | PowerFLAT (5 x 6) HV | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 750V | ||
Package Type PowerFLAT (5 x 6) HV | ||
Mount Type Surface | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
- Land van herkomst:
- CN
The STMicroelectronics e-mode powerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
Very high switching speed
High power management capability
Extremely low capacitances
Kelvin source pad for optimum gate driving
Zero reverse recovery charge
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