Infineon 800V CoolMOS P7 MOSFET, 4 A, 800 V, 3-Pin PG-TO251-3
- RS-stocknr.:
- 273-7471
- Fabrikantnummer:
- IPU80R1K4P7AKMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 4,73
(excl. BTW)
€ 5,725
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 1.495 stuk(s) vanaf 22 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 5 | € 0,946 | € 4,73 |
| 10 - 20 | € 0,77 | € 3,85 |
| 25 - 45 | € 0,756 | € 3,78 |
| 50 - 95 | € 0,738 | € 3,69 |
| 100 + | € 0,61 | € 3,05 |
*prijsindicatie
- RS-stocknr.:
- 273-7471
- Fabrikantnummer:
- IPU80R1K4P7AKMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | PG-TO251-3 | |
| Series | 800V CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Power Dissipation Pd | 32W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC for Industrial Applications, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type PG-TO251-3 | ||
Series 800V CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Power Dissipation Pd 32W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC for Industrial Applications, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET has better production yield by reducing ESD related failures. This MOSFET has less production issues and reduced field returns and easy to select right parts for fine tuning of designs. It enabling higher power density designs, BOM savings and lower assembly costs.
Fully optimized portfolio
Best in class performance
Easy to drive and to parallel
Integrated zener diode ESD protection
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